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1 Metal- Organic Molecular Beam Epitaxy
Electronics: MOMBEУниверсальный русско-английский словарь > Metal- Organic Molecular Beam Epitaxy
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2 OMBE
Nanotechnology: organic MBE, organic molecular beam epitaxy -
3 ОМЛЭ
Nanotechnology: OMBE, organic MBE, organic molecular beam epitaxy -
4 органическая молекулярно-лучевая эпитаксия
Nanotechnology: OMBE, organic MBE, organic molecular beam epitaxy, ОМЛЭУниверсальный русско-английский словарь > органическая молекулярно-лучевая эпитаксия
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Molecular-beam epitaxy — (MBE), is one of several methods of depositing single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho.MethodMolecular beam epitaxy takes place in high vacuum or ultra high vacuum (10−8… … Wikipedia
Molecular beam epitaxy — A simple sketch showing the main components and rough layout and concept of the main chamber in a Molecular Beam Epitaxy system Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals. It was invented in the late… … Wikipedia
Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… … Wikipedia
epitaxy — /ep i tak see/, n., pl. epitaxies. Crystall. epitaxis. * * * ▪ crystallography the process of growing a crystal of a particular orientation on top of another crystal, where the orientation is determined by the underlying crystal. The… … Universalium
Metalorganic vapour phase epitaxy — (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method of epitaxial growth of materials, especially compound semiconductors from the surface… … Wikipedia
Molekularstrahlepitaxie — (englisch molecular beam epitaxy, MBE) ist ein PVD Verfahren, um Kristalline dünne Schichten (bzw. Schichtsysteme) herzustellen. Das Verfahren wird vor allem in der Halbleitertechnik verwendet, unter anderem um Einkristalline Strukturen [1]… … Deutsch Wikipedia
Compound semiconductor — A compound semiconductor is a semiconductor compound composed of elements from two or more different groups of the periodic table [1]. These semiconductors typically form in groups 13 16 (old groups III VI), for example of elements from group 13… … Wikipedia
Allotaxie — Molekularstrahlepitaxie (engl. molecular beam epitaxy, MBE) ist ein PVD Verfahren, um dünne kristalline Schichten herzustellen. Der Begriff Molekularstrahlepitaxie wird vor allem in der Halbleitertechnik verwendet; das Verfahren wird angewandt um … Deutsch Wikipedia
OMBE — Molekularstrahlepitaxie (engl. molecular beam epitaxy, MBE) ist ein PVD Verfahren, um dünne kristalline Schichten herzustellen. Der Begriff Molekularstrahlepitaxie wird vor allem in der Halbleitertechnik verwendet; das Verfahren wird angewandt um … Deutsch Wikipedia
MOMBE — Metal Organic Molecular Beam Epitaxy (Academic & Science » Electronics) * Metal Oxide Molecular Beam Epitaxy (Governmental » Military) … Abbreviations dictionary
crystal — crystallike, adj. /kris tl/, n., adj., v., crystaled, crystaling or (esp. Brit.) crystalled, crystalling. n. 1. a clear, transparent mineral or glass resembling ice. 2. the transparent form of crystallized quartz. 3. Chem., Mineral. a solid body… … Universalium